bsm180d12p2e002-凯发k8一触即发
sic（碳化硅）功率模块
bsm180d12p2e002
主要规格
特性：
drain-source voltage[v]
1200
drain current[a]
204
total power dissipation[w]
1360
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-40
storage temperature (max.)[°c]
125
package
half bridge
package size [mm]
152x57.95 (t=18)
特点：
- low surge, low switching loss.
- high-speed switching possible.
- reduced temperature dependance.
reference design / application evaluation kit
-
- drive board - bsmgd2g12d24-evk001
this evaluation board, bsmgd2g12d24-evk001, is a gate driver board for full sic modules with the 2nd generation sic-mosfet in g and e type housing. this evaluation board contains all the necessary components for optimal and safety driving the sic module
| user guide |
|---|
-
- snubber module - mgsm1d72j2-145mh16
snubber module for bsm series (1200v, e / g type)
-
drive board for bsm series (1200v, c / e / g type)
