rld65nzx2-凯发k8一触即发
650nm low power lasers主要规格
特性：
application
sensor, barcode scanner, leveling, ranging
wave-length λ(min.)[nm]
650
wave-length λ(typ.)[nm]
658
wave-length λ(max.)[nm]
666
optical output po(max.)[mw]
7
ld reverse voltage(max.)[v]
2
pinpd reverse voltage(max.)[v]
20
optical output condition po(typ.)[mw]
5
threshold current ith(min.)[ma]
-
threshold current ith(typ.)[ma]
25
threshold current ith(max.)[ma]
35
operating current iop(min.)[ma]
-
operating current iop(typ.)[ma]
33
operating current iop(max.)[ma]
45
operating voltage vop(min.)[v]
-
operating voltage vop(typ.)[v]
2.3
operating voltage vop(max.)[v]
2.7
output efficiency η(min.)[w/a]
0.4
output efficiency η(typ.)[w/a]
0.6
output efficiency η(max.)[w/a]
1
monitor current im(min.)[ma]
0.08
monitor current im(typ.)[ma]
0.2
monitor current im(max.)[ma]
0.5
beam divergence θ//(min.)[deg]
6
beam divergence θ//(typ.)[deg]
8.5
beam divergence θ//(max.)[deg]
12
beam divergence θ⊥(min.)[deg]
24
beam divergence θ⊥(typ.)[deg]
28
beam divergence θ⊥(max.)[deg]
34
beam tolerance ⊿θ//(min.)[deg]
-3
beam tolerance ⊿θ//(typ.)[deg]
0
beam tolerance ⊿θ//(max.)[deg]
3
beam tolerance ⊿θ⊥(min.)[deg]
-4
beam tolerance ⊿θ⊥(typ.)[deg]
0
beam tolerance ⊿θ⊥(max.)[deg]
4
emission point accuracy ⊿xyz(min.)[µm]
-100
emission point accuracy ⊿xyz(typ.)[µm]
0
emission point accuracy ⊿xyz(max.)[µm]
100
emission point distance(typ.)[µm]
0
polarity
n(ld anode / pd cathode)
operating temperature (min.)[°c]
-10
operating temperature (max.)[°c]
70
package size [mm]
φ5.6
特点：
- 650nm red
- single mode
- industry standard φ5.6 metal stem
- higher esd
