bm3g015muv-凯发k8一触即发
nano cap™, ecogan™, 650v 150mω 2mhz, gan hemt power stage icthis is the product guarantees long time support in industrial market. bm3g007muv-lb provides an optimum solution for all electronics systems that requires high power density and efficiency. by integrating the 650v enhancement gan hemt and silicon driver to rohm's original package, parasitic inductance caused by a pcb and wire bonding is reduced significantly compared to traditional discrete solutions. owing to this, a high switching slew rate up to 150v/ns can be achieved. on the other hand, adjustable gate drive strength contributes to low emi, and various protections and other additional functions provide optimized cost, pcb size. this ic is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction mosfet.
主要规格
特性：
vin (min.)[v]
-0.6
vin (max.)[v]
30
operating current@130 khz(typ) [μa]
450
quiescent current (typ) [μa]
150
switching frequency(max)[mhz]
2
turn-on delay time(typ)[ns]
11
turn-off delay time(typ)[ns]
15
temperature (min.)[°c]
-40
temperature (max.)[°c]
105
on state resistance(typ)[mω]
150
package size [mm]
8.0x8.0 (t=1.0)
application
networking, server
storage temperature (min.)[°c]
-55
storage temperature (min.)[°c]
150
特点：
- nano cap™ integrated output selectable 5v ldo
- long time support product for industrial applications
- wide operating range for vdd pin voltage
- wide operating range for in pin voltage
- low vdd quiescent and operating current
- low propagation delay
- high dv/dt immunity
- adjustable gate drive strength
- power good signal output
- vdd uvlo protection
- thermal shutdown protection
evaluation
board
-
- evaluation board
- bm3g015muv-evk-003
the bm3g015muv-evk-003 evaluation board consists of the bm3g015muv (gan fet (650v 150mω), integrated driver and protection circuit) and a board on which peripheral components are mounted. this ic is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction mosfet.
